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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
0 October 2006
FGP7N60RUFD
600V, 7A RUF IGBT CO-PAK
Features
* High speed switching * Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A * High input impedance * CO-PAK, IGBT with FRD : trr = 50 ns (typ.) * Short Circuit rated, 10us @ TC=100C, VGE=15V, VCE=300V
Applications
Motor controls and general purpose inverters.
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature.
C
G
1
TO-220 2.Collector 3.Emitter
1.Gate
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Description
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGP7N60RUFD
600 20 14 7 21 12 60 69 28 -55 to +150 -55 to +150 300
Units
V V A A A A A W W C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJC(DIODE) RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
----
Max.
1.8 3.0 62.5
Units
C/W C/W C/W
(c)2005 Fairchild Semiconductor Corporation
1
FGP7N60RUFD Rev. A
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Package Marking and Ordering Information
Device Marking
FGP7N60RUFD
Device
FGP7N60RUFDTU
Package
TO-220
Packaging Type
Rail / Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 250uA VGE = 0V, IC = 3mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
600 ----
-0.6 ---
--250 100
V V/C uA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 7mA, VCE = VGE IC = 7A, VGE = 15V IC = 7A, VGE = 15V, TC = 125C IC = 14 A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---510 55 15 ---pF pF pF 5.0 ---6.5 1.95 2.1 2.65 8.0 2.8 --V V V V
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance Measured 5mm from PKG VCE = 300 V, IC = 7A, VGE = 15V VCC = 300 V, IC = 7 A, RG =30, VGE = 15V, Inductive Load, TC = 125C VCC = 300 V, IC = 7A, RG = 30, VGE = 15V, Inductive Load, TC = 25C ------------------60 60 60 170 0.23 0.10 0.33 65 70 55 350 0.25 0.27 0.52 24 4 10 7.5 --80 280 --0.5 -------36 6 15 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH
FGP7N60RUFD Rev. A
2
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Electrical Characteristics of DIODE T
Symbol
VFM trr Irr Qrr
C
= 25C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 7A IF = 7A dI/dt = 200 A/s TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C TC = 25C TC = 100C
Min.
---------
Typ.
1.65 1.58 50 58 2.5 3.3 62.5 95.7
Max.
2.1 -65 -3.75 -122 --
Units
V
Diode Reverse Recovery Time
ns
Diode Peak Reverse Recovery Current
A
Diode Reverse Recovery Charge
nC
FGP7N60RUFD Rev. A
3
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40
Figure 2. Typical Saturation Voltage Characteristics
40
C o m m o n E m itte r V Ge = 1 5 V Tc = 25 C o Tc = 125 C
o
T C = 25 C
o
20V 15V 12V
Collector Current, IC [A]
Collector Current, IC[A]
30
30
20
10V
20
10
V GE= 8V
10
0
0
0
2
4
6
8
0
2
4
6
8
C ollector-Em itter Voltage, V C E [V]
C o lle c to r-E m itte r V o lta g e , V c e [V ]
Figure 3. Saturation Voltage vs Case Temperature at Variant Current Level
4
Com m om Em itter V GE = 15V
Figure 4. Load Current vs Frequency
15
Vcc = 300V load Current : peak of square wave
Collector - Emitter Voltage, VCE[V]
Ic = 7 A
2
Ic =3.5 A
Load Current [A]
3
Ic = 14 A
10
5
1
0
25
50
75
100
o
125
150
0 0.1
Duty cycle : 50% o Tc = 100 C Power Dissipation = 14W 1 10 100 1000
Case Temperature, Tc [ C]
Frequency [kHz]
Figure 5. Saturation Voltage vs. Vge
10 [V]
Common Emitter o T C = 25 C
Figure 6. Saturation Voltage vs. Vge
10
C o m m o n E m itte r o T c = 125 C
CE
8
Collector - Emitter Voltage, V
Collector - Emitter Voltage, V
CE
[V]
8
6
6
4
7A
4
7A
14 A
14A
2
Ic=3.5A
2
Ic=3.5A
0
5
10 15 Gate - Emitter Voltage, V GE [V]
20
5
10
15
20
G ate - E m itter V oltage, V G E [V ]
FGP7N60RUFD Rev. A
4
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
(Continued)
Figure 7. Capacitance Characteristics Temperature at Variant Current Level
1000 Common Emitter V GE = 0V, f = 1MHz T C = 25 C
o
Figure 8. Turn-On Characteristics vs. Gate Resistance
Ton
800 Ciss
Switching Time [ns]
Capacitance [pF]
100
Tr
600
400
Coss Crss
C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V IC = 7 A Tc = 25 C o Tc = 125 C 10
o
200
0
10
1
10
Collector-Emitter Voltage, V CE [V]
G a te R e sista nce , R G [ ]
100
Figure 9. Turn-Off Characteristics vs. Gate Resistance
Com m on Em itter V CC = 300V, V GE = +/-15V IC = 7A Tc = 25 C o Tc = 125 C Toff
o
Figure 10. Switching Loss vs. Gate Resistance
600 500 400 Switching Loss [uJ] 300
1000
C o m m o n E m itte r V C C = 3 0 0 V , V G E = + /-1 5 V IC = 7 A Tc = 25 C o Tc = 125 C
o
Eon E o ff Eon
Switching Time [ns]
Tf Toff
200
Tf
100 10 G a te R e s is ta nc e , R G [ ]
E o ff
100
10 Gate Resistance, R G [ ]
100
100
Figure 11. Turn-On Characteristics vs. Collector Current
200 150 100
Common Emitter V GE = +/-15V, RG=30 IC = 7A Tc = 25 C o Tc = 125 C
o
Figure 12. Turn-Off Characteristics vs. Collector Current
1000 800 600 Switching Time [ns]
Com m on Em itter V GE = +/-15V, R G =30 IC = 7A T c = 25 C o T c = 125 C T off Tf T off
o
Switching Time [ns]
Ton
400
50
Tr
200
Tf
4
6
8
10
12
14
4
6
8
10
12
14
Collector Current, IC [A]
Collector C urrent, IC [A]
FGP7N60RUFD Rev. A
5
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
1000
Common Emitter V GE = +/-15V, R G=30
Figure 14. Gate Charge Characteristics
15 Common Emitter R L = 43 ohm T C = 25 C 10 Vcc = 100V
o
Gate-Emitter Voltage, VGE [V]
IC = 7A
Switching Loss [uJ]
Tc = 25 C o Tc = 125 C
o
200V
300V
Eoff Eon
Eoff
5
100
4
6
8
10
12
14
0 0 4
Collector Current, IC [A]
Gate Charge, Q g [nC]
8
12
16
20
24
Figure 15. SOA Characteristics
100 Ic MAX (Pulsed) 10 Ic MAX (Continuous) 100s 1ms 50s
Collector Current, Ic [A]
1
DC Operation
0.1
0.01 0.1
Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000
Collector - Emitter Voltage, VCE [V]
Figure 16. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1
0 .1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .0 1 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
FGP7N60RUFD Rev. A
6
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Typical Performance Characteristics
Figure 17. Forward Voltage Characteristics
(Continued)
Figure 18. Reverse Recovery Current
3.0
10
Reverse Recovery Current , Irr [A]
di/d t=200 A /u s 2.5
Forward Current , IF [A]
1
T C = 100 C T C = 25 C
o
o
2.0 di/dt=10 0A /u s 1.5
0.1 0.5 1.0 1.5 2.0 2.5 3.0
1.0 2 4 6 8 10 12 14
Forward Voltage , VF [V]
F orw ard C urrent , IF [A ]
Figure 19. Stored Charge
80
Figure 20. Reverse Recovery Time
60
Reverse Recovery Charge , Qrr [nC]
Reverse Recovery Time , trr [ns]
70
60
50
di/dt=100A /us
di/dt=200A/us
50
40
di/dt=100A/us
40
di/dt=200A /us
30 2 4 6 8 10 12 14
30 2 4 6 8 10 12 14
Forward Current , IF [A]
Forward C urrent , IF [A]
Dimensions in Millimeters
FGP7N60RUFD Rev. A
7
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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FGP7N60RUFD Rev. A
8
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production

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